Wet Process Development Engineer

Advanced Semiconductor Manufacturing | 28nm SiGe Technology

Overview

SiGe strained channel and silicided contact integration at 28nm demand wet etch and clean chemistries with nanometer-level precision—removing exactly the right material, with exact selectivity, without disturbing adjacent films or device structures.

These processes are not yet fully production-ready. You will build them.

As a Wet Process Development Engineer, you will own the development, integration, and qualification of wet etch and clean modules for 28nm SiGe and silicidation device flows—directly enabling the transition from technology development to high-volume manufacturing.

Your work spans the full lifecycle: from chemistry formulation through module integration, yield optimization, and production readiness. The processes you develop will run on every wafer in manufacturing.

Key Responsibilities

Module Integration

• Develop and optimize wet process flows for SiGe epi-layer cleaning
• Enable selective material removal without damaging underlying silicon or gate oxide

Selective Etching

• Define chemistries for high-precision isotropic and anisotropic etching
• Optimize selectivity across SiGe, Si, and silicided films
• Control undercut and profile behavior at 28nm geometries

Yield & Defectivity

• Identify root causes of defects using FMEA and 8D methodologies
• Implement Statistical Process Control (SPC) to support yield ramp

Cross-Functional Collaboration

• Partner with Epi, Lithography, Spacer Films, and CMP teams
• Ensure seamless integration across the full fabrication flow
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Metrology & Characterization

• Use SEM, TEM, ellipsometry, and AFM to evaluate surface roughness and etch profiles at atomic resolution

What It Takes

This role requires the ability to:

• Manage multiple parallel workstreams under tight timelines
• Lead technical discussions with authority
• Clearly communicate risks, tradeoffs, and progress
• Drive alignment across cross-functional engineering teams

Qualifications

Minimum Requirements

• Master’s or Ph.D. in Materials Science, Chemical Engineering, Electrical Engineering, Physics, or related field
• 5+ years in semiconductor R&D or advanced wafer fabrication (28nm or below)

Techical Expertise In:

• SiGe device physics, surface preparation, and reaction kinetics
• Wet etch and clean chemistries across multiple film types
• Hands-on experience with wet process tools (LAM, TEL, SCREEN, or equivalent)
• Design of Experiments (DOE) methodology
• Driving process development from concept to production

Preferred Qualifications

• Experience building wet process modules from the ground up
• Strong correlation between inline data and end-of-line electrical results
• Ability to influence and collaborate across internal and external stakeholders
• Strong written and verbal communication skills
• Proven ability to ramp quickly on new technologies and systems

Why This Role

• Direct impact on yield, device performance, and manufacturing success
• Ownership of critical process modules used on every wafer
• Exposure to advanced node integration challenges
• High visibility across process, device, and manufacturing teams